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Si3495DV
Vishay Siliconix
P-Channel 20-V (D-S), 1.5-V (G-S) MOSFET
PRODUCT SUMMARY
FEATURES
V DS (V)
- 20
R DS(on) ( Ω )
0.024 at V GS = - 4.5 V
0.030 at V GS = - 2.5 V
0.038 at V GS = - 1.8 V
0.048 at V GS = - 1.5 V
I D (A)
-7
- 6.2
- 5.2
- 5.0
? Halogen-free According to IEC 61249-2-21
Definition
? TrenchFET ? Power MOSFET: 1.5 V Rated
? Ultra-Low On-Resistance
? 100 % R g Tested
? Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
? Load Switch and PA Switch for Portable Devices
TSOP-6
Top V iew
(4) S
1
6
3 mm
2
3
5
4
(3) G
2.85 mm
Ordering Information: Si3495DV-T1-E3 (Lead (Pb)-free)
Si3495DV-T1-GE3 (Lead (Pb)-free and Halogen-free)
(1, 2, 5, 6) D
Marking Code:
95xxx
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
V DS
V GS
5s
- 20
±5
Steady State
Unit
V
Continuous Drain Current (T J = 150 °C) a
Pulsed Drain Current
T A = 25 °C
T A = 85 °C
I D
I DM
-7
- 3.6
- 20
- 5.3
- 3.9
A
Continuous Source Current (Diode Conduction) a
I S
- 1.7
- 0.9
Maximum Power Dissipation a
Operating Junction and Storage Temperature Range
T A = 25 °C
T A = 85 °C
P D
T J , T stg
2.0
1.0
- 55 to 150
1.1
0.6
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient
a
t ≤ 5s
Steady State
R thJA
45
90
62.5
110
°C/W
Maximum Junction-to-Foot (Drain)
Steady State
R thJF
25
30
Note:
a. Surface Mounted on 1" x 1" FR4 board.
Document Number: 73135
S09-2110-Rev. C, 12-Oct-09
www.vishay.com
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